Literature cited
V. P. Gribkovskii, The Theory of Light Absorption and Emission in Semiconductors [in Russian], Minsk (1975).
S. I. Radautsan and A. E. Tsurkan, Zinc Telluride [in Russian], Kishinev (1972).
V. K. Kononenko, Zh. Prikl. Spektrosk.,23, No. 3, 528–553 (1975).
K. Takahashi, Bull. Tokyo Inst. Technol., No. 100, 91–105 (1970).
A. E. Tsurkan, V. I. Verlan, and S. A. Rebrov, Production and Examination of New Semiconductor-Engineering Materials [in Russian], Kishinev (1980), pp. 129–138.
S. A. Rebrov, Heterojunction Photoelectric Parameters [in Russian], Kishinev (1980), pp. 44–58.
S. I. Radautsan, S. A. Rebrov, and A. E. Tsurcan (Tsurkan), Phys. Status Solidi (a),84, K169-K181 (1984).
P. G. Lukashevich, V. P. Gribkovskii, and V. A. Ivanov, Zh. Prikl. Spektrosk.,32, No. 6, 1073–1078 (1980).
E. V. Russu et al., Abstracts for the All-Union Conference on Ternary Semiconductors and their Applications [in Russian], Kishinev (1979), pp. 209–210.
A. V. Novoselova (ed.), The Physicochemical Properties of Semiconductors (Handbook) [in Russian], Moscow (1979).
J. Black and S. Lockwood, J. Appl. Phys.,34, No. 1, 178–180 (1963).
I. K. Vereshchagin, Crystal Electroluminescence [in Russian], Moscow (1984).
R. C. C. Leite, J. C. Sarace, D. H. Olson, et al., Phys. Rev.,137, No. 5A, 1583–1590 (1965).
V. M. Glazov, A. N. Krestovnikov, and V. A. Nagiev, Izv. Akad. Nauk SSSR, Ser. Neorg. Mater.,9, No. 11, 1183–1189 (1973).
Additional information
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 46, No. 3, pp. 419–423, March, 1987.
Rights and permissions
About this article
Cite this article
Radautsan, S.I., Rebrov, S.A. & Tsurkan, A.E. Electroluminescent parameters of ZnTe-InP heterojunctions. J Appl Spectrosc 46, 267–269 (1987). https://doi.org/10.1007/BF00660211
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00660211