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Spectroscopy of isoelectronic nitrogen impurity in epitaxial structures based on wide-zone solid solutions in the In-Ga-P-As system

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Literature cited

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 38, No. 3, pp. 449–455, March, 1983.

In conclusion we wish to thank V. P. Sushkov and M. V. Chukichev for their interest, and V. M. Kanevskii for carrying the x-ray microanalysis of the epitaxial layers.

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Ermakov, O.N. Spectroscopy of isoelectronic nitrogen impurity in epitaxial structures based on wide-zone solid solutions in the In-Ga-P-As system. J Appl Spectrosc 38, 339–343 (1983). https://doi.org/10.1007/BF00659890

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  • DOI: https://doi.org/10.1007/BF00659890

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