This is a preview of subscription content, log in via an institution to check access.
Literature cited
Zh. I. Alferov, D. Z. Garbuzov, S. G. Konnikov, et al., “Photoluminescence of epitaxial layers of solid solutions GaxIn1−xP in the composition range 0.3 < x < 1,” Fiz. Tekh. Poluprovodn.,7, 624–627 (1973).
V. S. Vavilov, O. N. Ermakov, R. S. Ignatkina, et al., “Cathode luminescence of epitaxial layers of the solid solutions In1−xGaxP (0.7 < x < 1.0),” Fiz. Tekh. Poluprovodn.,11, 2089–2094 (1977).
Zh. I. Alferov, I. N. Arsent'ev, D. Z. Garbuzov, and V. D. Rumyantsev, “Red injection heterolasers in the system Ga-In-P-As,” Pis'ma Zh. Tekh. Fiz.,1, 406–408 (1975).
A. P. Bogatov, L. M. Dolginov, P. G. Eliseev, et al., “Radiative characteristics of laser heterostructures based on InP-GaxIn1−xPi1−zAsz,” Fiz. Tekh. Poluprovodn.,9, 1956–1959 (1975).
J. J. Coleman, N. Holonyak, M. J. Ludowise, and P. D. Wright, “Yellow In1−xGaxP1−zAsz double-heterojunction lasers,” J. Appl. Phys.,47, 2015–2019 (1976).
O. N. Ermakov, L. S. Garba, Y. A. Golovanov, et al., “Yellow-green In1−xGaxP and In1−xGaxP1−zAsz LEDs and electron-beam-pumped lasers prepared by LPE and VPE,” J. IEEE Trans. Electron Devices,ED-26, 1190–1194 (1979).
P. J. Dean, “Isoelectronic traps in semiconductors (experimental),” J. Lum.,7, 51–78 (1973).
A. É. Yunovich, “Radiative recombination and optical properties of gallium phosphide,” in: Ya. E. Pikrovskii (ed.), Radiative Recombination in Semiconductors [in Russian], Nauka, Moscow (1972), pp. 224–304.
V. S. Vavilov, O. N. Ermakov, V. P. Sushkov, and M. V. Chukichev, “Radiative recombination with the participation of isoelectronic centers in solid solutions In1−xGaxP and Ga1−yAlyP,” Fiz., Tekh. Poluprovodn.,12, 1686–1691 (1978).
O. N. Ermakov and V. P. Sushkov, “Obtaining nitrogen-doped epitaxial layers of solid solutions In1−xGaxP1−xAsz and investigating their luminescent properties,” Elektron. Tekh., Poluprovodn. Prib.,7(125), 51–57 (1978).
O. N. Ermakov, R. S. Ignatkina, V. P. Suchkov, and M. V. Chukichev, “Radiative transitions in solid solutions In1−xGaxP1−zAsz,” Fiz. Tekh. Poluprovodn.,12, 678–681 (1978).
Z. I. Alferov, S. G. Konnikov, V. A. Misurnyi, et al., “Electron-beam microprobe analysis of expitaxial GaxIn1−xP solid solutions,” Kryst. Tech.,8, 1029–1035 (1973).
Ninth International Conference in Semiconductor Physics: Conference Proceedings [in Russian], Vol. 2, Nauka, Moscow (1969), pp. 1150–1155.
A. N. Pikhtin and A. V. Solomonov, “Radiative recombination of free excitons in GaxIn1−xP with a nonstraight band structure,” Fiz. Tekh. Poluprovodn.,11, 570–572 (1977).
P. J. Dean, A. M. White, M. G. Williams, and E. W. Astles, “The isoelectronic trap bismuth in indium phosphide,” Solid-State Commun.,9, 1555–1558 (1971).
Additional information
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 38, No. 1, pp. 155–160, January, 1983.
It remains to thank V. P. Sushkov and M. V. Chukichev for constant interest in the work.
Rights and permissions
About this article
Cite this article
Ermakov, O.N. Radiative recombination with the participation of isoelectronic traps in solid solutions In1−xGaxP1−zAsz doped with bismuth. J Appl Spectrosc 38, 133–137 (1983). https://doi.org/10.1007/BF00659870
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00659870