Journal of Applied Spectroscopy

, Volume 45, Issue 6, pp 1253–1256 | Cite as

Use of negative luminescence for studying generation activity in surface narrow-gap semiconductors

  • S. S. Bolgov
  • V. K. Malyutenko
  • V. I. Pipa
  • E. I. Yablonovskii


Analytical Chemistry Molecular Structure Generation Activity Negative Luminescence Study Generation Activity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature cited

  1. 1.
    V. V. Antonov-Romanovskii, B. I. Stepanov, M. V. Fok, and A. P. Khapalyuk, Dokl. Akad. Nauk SSSR,105, No. 1, 50–53 (1955).Google Scholar
  2. 2.
    B. I. Stepanov, Usp. Fiz. Nauk,58, No. 1, 3–36 (1956).Google Scholar
  3. 3.
    B. I. Stepanov, Opt. Spektrosk.,1, No. 2, 125–131 (1956).Google Scholar
  4. 4.
    F. R. Kessler and J. W. Mangelsdorf, Phys. Status Solidi B,105, No. 2, 525–535 (1981).Google Scholar
  5. 5.
    S. S. Bolgov, V. K. Malyutenko, and V. I. Pipa, Fiz. Tekh. Poluprovodn.,17, No. 2, 208–212 (1983).Google Scholar
  6. 6.
    V. K. Malyutenko, S. S. Bolgov, and E. I. Yablonovsky, Inf. Phys.,25, No. 1/2, 115–119 (1985).Google Scholar
  7. 7.
    S. S. Bolgov, V. K. Malyutenko, and V. I. Pipa, Inventor's Certificate No. 1023676; Byull. Izobr., No. 22 (1983).Google Scholar
  8. 8.
    S. S. Bolgov, V. K. Malyutenko, and E. I. Yablonskii, Inventor's Certificate No. 1117736; Byull. Izobr., No. 37 (1984).Google Scholar
  9. 9.
    M. Zerbst, Zs. Angew. Phys.,221, No. 7, 30–33 (1967).Google Scholar
  10. 10.
    D. J. Fitzgerald and A. S. Grove, Surf. Sci.,9 No. 1, 347–365 (1968).Google Scholar
  11. 11.
    É. I. Rashba, Fiz. Tverd. Tela,6, No. 11, 3247–3250 (1964).Google Scholar
  12. 12.
    O. Madelung, Physics of Group III and V Semiconductors [in Russian], Moscow (1967), p. 477.Google Scholar
  13. 13.
    K. Khilsum and A. Rouz-Ins, III–V Semiconductors [in Russian], Moscow (1963), p. 323.Google Scholar
  14. 14.
    V. K. Malyutenko and K. Yu. Guga, Optoelektron. Poluprovodn. Tekh., No. 4, 69–76 (1983).Google Scholar
  15. 15.
    I. I. Boiko, V. K. Malyutenko, and A. I. Liptuga, Inf. Phys.,15, 143–148 (1975).Google Scholar
  16. 16.
    H. H. Fujisada, J. Appl. Phys.,45, No. 8, 3530–3540 (1974).Google Scholar
  17. 17.
    A. F. Kravchenko, B. V. Morozov, and É. I. Skok, Fiz. Tekh. Poluprovodn.,8, No. 10, 2035–2038 (1974).Google Scholar
  18. 18.
    L. A. Almazov, A. I. Liptuga, and V. K. Malyutenko, Fiz. Tekh. Poluprovodn.,13, No. 1, 52–58 (1979).Google Scholar
  19. 19.
    W. Hanus and M. Oszwaldowski, Phys. Status Solidi A,36, No. 2, 445–452 (1976).Google Scholar
  20. 20.
    V. K. Malyutenko, E. I. Yablonovskii, S. S. Bolgov et al., Fiz. Tekh. Poluprovodn.,18, No. 2, 340–342 (1984).Google Scholar
  21. 21.
    T. Morimoto and M. Chiba, Phys. Lett. A,85, No. 6, 395–398 (1981).Google Scholar

Copyright information

© Plenum Publishing Corporation 1987

Authors and Affiliations

  • S. S. Bolgov
  • V. K. Malyutenko
  • V. I. Pipa
  • E. I. Yablonovskii

There are no affiliations available

Personalised recommendations