Journal of Applied Spectroscopy

, Volume 41, Issue 4, pp 1161–1165 | Cite as

Emission of silicon carbide surface barrier diodes with forward biasing

  • L. A. Kosyachenko
  • E. F. Kukhto
  • V. M. Sklyarchuk


Silicon Analytical Chemistry Carbide Molecular Structure Silicon Carbide 
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Literature cited

  1. 1.
    L. A. Kosyachenko, N. M. Pan'kiv, A. V. Pivovar, and V. M. Sklyarchuk, Ukr. Fiz. Zh.,27, No. 1, 101 (1982).Google Scholar
  2. 2.
    L. A. Kosyachenko, A. V. Pivovar, and V. M. Sklyarchuk, Zh. Prikl. Spektrosk.,36, No. 2, 236 (1982).Google Scholar
  3. 3.
    L. A. Kosyachenko, Zh. Tekh. Fiz.,52, No. 4, 779 (1982).Google Scholar
  4. 4.
    S. M. Zi, Physics of Semiconductor Devices [in Russian], Énergiya, Moscow (1973).Google Scholar
  5. 5.
    M. I. Elinson (ed.), Cold Cathodes [in Russian], Sov. Radio, Moscow (1974).Google Scholar
  6. 6.
    D. Pines, Phys. Rev.,92, No. 3, 326 (1953).Google Scholar
  7. 7.
    E. M. Conwell, High Field Transport in Semiconductors, Academic Press (1967).Google Scholar
  8. 8.
    N. Ashcroft and N. Mermin, The Physics of Solids [Russian translation], Mir, Moscow (1979).Google Scholar
  9. 9.
    L. A. Kosyachenko, E. F. Kukhto, and V. M. Sklyarchuk, in: The Technology of Means of Communication [in Russian], General Engineering Series, No. 5, pp. 54–60, Moscow (1981).Google Scholar
  10. 10.
    H. Ehrenreich and H. R. Philipp, Phys. Rev.,128, No. 4, 1622 (1962).Google Scholar
  11. 11.
    P. G. Borzyak and Yu. A. Kulyupin, Ukr. Fiz. Zh.,24, No. 2, 204 (1979).Google Scholar

Copyright information

© Plenum Publishing Corporation 1985

Authors and Affiliations

  • L. A. Kosyachenko
  • E. F. Kukhto
  • V. M. Sklyarchuk

There are no affiliations available

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