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Radiation-induced variations in the spectral characteristics of InXGa1−XAs:Si light-emitting diodes

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Authors
  1. T. V. Torchinskaya
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  2. G. N. Semenova
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  3. T. G. Berdinskikh
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  4. E. Yu. Brailovskii
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 45, No. 2, pp. 252–257, August, 1986.

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Torchinskaya, T.V., Semenova, G.N., Berdinskikh, T.G. et al. Radiation-induced variations in the spectral characteristics of InXGa1−XAs:Si light-emitting diodes. J Appl Spectrosc 45, 828–833 (1986). https://doi.org/10.1007/BF00657466

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  • DOI: https://doi.org/10.1007/BF00657466

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