Abstract
The electrical resistivity of Tb, Dy, and Ho single crystals has been investigated with a precision of one in 5×104 in the temperature range 1–4 K and in magnetic fields up to 60 kOe. In Tb and Dy, in zero field, the change in resistance is about 0.3%. The resistance vs. temperature curve shows a point of inflection at around 3.5 K, with a more rapid decrease in resistance below this temperature. In a magnetic field, the latter part shows a gradual reduction as field increases. On the basis of the present result and previously published specific heat results, the source of this resistivity has been suggested to be the scattering of the conduction electrons by the rare earth ions in the oxide environment. The Ho crystals show a slightly stronger temperature dependence (∼0.4%) but no anomalous component. These results have been discussed on the basis of the spin-wave and phonon scattering. The phonon resistivity of Dy and Ho can be described by aT 3 law.
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Singh, R.L. High-precision electrical resistivity of Tb, Dy, and Ho single crystals between 1 and 4 K. J Low Temp Phys 25, 745–754 (1976). https://doi.org/10.1007/BF00657296
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DOI: https://doi.org/10.1007/BF00657296