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Dielectric anomalies in bismuth: Electronic relaxation times at far-infrared frequencies

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Abstract

Two dielectric anomalies in bismuth at far-infrared frequencies in the range 30–85 cm−1 have been studied. Scattering rates derived from a linewidth analysis show basically a linear increase as a function of frequency. However, deviations from a linear dependence at fields near the extreme quantum limit are seen.

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Authors and Affiliations

  1. Physik-Department, Technische Universität München, Garching, Germany

    Avid Kamgar & H. Schaber

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  1. Avid Kamgar
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  2. H. Schaber
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Kamgar, A., Schaber, H. Dielectric anomalies in bismuth: Electronic relaxation times at far-infrared frequencies. J Low Temp Phys 26, 423–438 (1977). https://doi.org/10.1007/BF00655420

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  • DOI: https://doi.org/10.1007/BF00655420

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