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Influence of lattice defects on the Kondo resistance anomaly in diluteZnMn thin film alloys

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Abstract

ThinZnMn films (200–3000 ppmMn) are quench condensed in uhv onto quartz plates held at 5 K. Their resistance is measured down to 0.35 K and then again after stepwise annealing to higher temperatures (maxT a =350 K). In the lower concentrated films we find an increase by 25% of the slope of the curves in the range where ρ is proportional to logT while increasingT a to 300 K. This is explained by the decrease in nonmagnetic defect concentration during the annealing process. Further analysis of the data shows that there is also a strengthening of the Rudermann-Kittel interaction between the magnetic impurities because of the increasing mean free path of the conduction electrons during annealing. The effect is more pronounced in the higher concentrated alloy films, where a maximum in the resistance curve is observed similar to bulk material alloy samples.

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Part of this work was presented at the LT-13 Conference at Boulder, Colorado, in 1972.

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Falke, H.P., Jablonski, H.P. & Wassermann, E.F. Influence of lattice defects on the Kondo resistance anomaly in diluteZnMn thin film alloys. J Low Temp Phys 11, 53–63 (1973). https://doi.org/10.1007/BF00655036

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  • DOI: https://doi.org/10.1007/BF00655036

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