Superconducting energy gap in semiconducting GeTe
Tunneling measurements were made on thin films (700–1400 Å) of GeTe to determine the dependence of the superconducting energy gap on carrier concentration. Temperatures as low as ∼25 mK were used and perpendicular magnetic fields were applied to measure the critical fields. The energy gap Δ was found to vary from 30 to 42 µeV for carrier concentrations from 1.5 to 2.4 × 1021 / cm3.
KeywordsMagnetic Field Thin Film Magnetic Material Carrier Concentration GeTe
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- 1.M. L. Cohen,Phys. Rev. 134, A511 (1964).Google Scholar
- 2.R. A. Hein, J. W. Gibson, R. Mazelsky, R. C. Miller, and J. K. Hulm,Phys. Rev. Lett. 12, 320 (1964).Google Scholar
- 3.P. J. Stiles, L. Esaki, and J. F. Schooley,Phys. Lett. 23, 206 (1966).Google Scholar
- 4.G. Binnig and H. E. Hoenig,Solid State Comm. 14, 597 (1974).Google Scholar
- 5.L. Esaki and P. J. Stiles,Phys. Rev. Lett. 16, 1108 (1966).Google Scholar
- 6.J. Bardeen, L. N. Cooper, and J. R. Shreiffer,Phys. Rev. 108, 1175 (1957); S. Bermon, National Science Foundation Grant No. NSF-GP1100 Technical Report No. 1 (1964), unpublished.Google Scholar
- 7.J. K. Hulm, C. K. Jones, R. Mazelsky, R. C. Miller, R. A. Hein, and J. W. Gibson, inProc. of the 9th Int. Conf. on Low Temp. Physics, J. G. Daunt, D. O. Edwards, F. J. Milford, and M. Yaqub, eds. (Plenum Press, New York, 1965), p. 600.Google Scholar
- 8.M. L. Cohen,Superconductivity, R. D. Parks, ed. (Marcel Dekker, New York, 1969), Chapter 12.Google Scholar