Literature cited
M. J. Rand and R. D. Standley, Appl. Opt.,11, 2482 (1972).
D. M. Brown, P. V. Gray, F. K. Heumann, H. R. Philipp, and E. A. Taft, J. Electrochem. Soc.,115, 311 (1968).
Yu. I. Kol'tsov, N. G. Kol'tsova, and G. I. Zhuravlev, Izv. Akad. Nauk SSSR, Neorg. Mater.,7, 521 (1971).
Yu. I. Kol'tsov, N. G. Kol'tsova, G. I. Zhuravlev, and N. V. Korobov, Zh. Prikl. Spektrosk.,16, 474 (1972).
C. R. Fritsche and W. Rothemund, J. Electrochem. Soc.,119, 1243 (1972).
O. D. Goryunova, E. P. Kurazaev, and O. V. Sopov, Élektron. Tekh., Ser. 2, No. 4, 38 (1969).
E. M. Zolotov, V. A. Kiselev, and V. A. Sychugov, Usp. Fiz. Nauk,112, 231. (1974).
Additional information
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 26, No. 1, pp. 164–166, January, 1977.
The authors thank L. S. Smirnov for useful discussions and V. V. Voskoboinikov for providing the silicon nitride and silicon oxinitride films.
Rights and permissions
About this article
Cite this article
Gerasimenko, N.N., Kovalevskaya, T.I., Pan'kin, V.G. et al. Changes in the optical properties of films of silicon nitride, silicon oxinitride, and silicon oxide upon ion irradiation. J Appl Spectrosc 26, 129–131 (1977). https://doi.org/10.1007/BF00640413
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00640413