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Low-temperature oxidation of silicon in microwave oxygen plasma

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Abstract

The growth of silicon dioxide at low temperature in an oxygen plasma is investigated using a simplified electrodeless microwave discharge arrangement. The growth behaviour of the oxide is discussed in terms of plasma parameters. The compositional and electrical characterization of the grown oxide have been made to examine its performance for device applications. The results are compared with earlier observations by other authors.

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Authors and Affiliations

  1. Microelectronics Centre, Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, 721 302, Kharagpur, India

    S. K. Ray, C. K. Maiti & N. B. Chakraborti

Authors
  1. S. K. Ray
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  2. C. K. Maiti
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  3. N. B. Chakraborti
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Ray, S.K., Maiti, C.K. & Chakraborti, N.B. Low-temperature oxidation of silicon in microwave oxygen plasma. J Mater Sci 25, 2344–2348 (1990). https://doi.org/10.1007/BF00638025

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  • DOI: https://doi.org/10.1007/BF00638025

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