Literature cited
N. V. Ashkinadze, L. K. Dumish, and V. V. Dubro, “A study of the structural and electro-physical properties of silicon dioxide implanted with boron and phosphorus ions,” in: Electronic Engineering, series 2, Semiconductor Devices [in Russian], issue 5 (1975), pp. 3–9.
C. R. Fritzsche and W. Rothemund, “Ion implantation and annealing effects in SiO2 layers on silicon studied by optical measurements,” J. Electrochem. Soc.,119, No. 9, 1243–1248 (1972).
N. N. Gerasimenko, P. E. Kandyba, Z. V. Panova, and V. Z. Petrova, “Production of borosilicate and phosphorosilicate films by ion implantation,” in: Electronic Engineering series 3, Microelectronics [in Russian], issue 2 (1978), pp. 55–59.
P. P. Konorov (editor), Proceedings of the Fourth All-Union School Seminar on the Physics of Semiconductor Surfaces [in Russian], Leningr. Cos. Univ. im. A. A, Zhdanova, Leningrad (1979), pp. 155–162.
A. B. Gerasimov, N. R. Angina, L. I. Ushangishvili, and A. G. Shillo, “Technological aspects of the creation of radiation-resistant MOS integrated circuits,” Zarubezhnaya Elektronnaya Tekhnika, No. 1, 25–33 (1979).
V. M. Tuluevskii and Yu. V. Osokin, “A study of the effects of water on the structures of germanium planar uhf low-noise transistors,” in: Electronic Engineering, series 2, Semiconductor Devices [in Russian], issue 9(81) (1973), pp. 83–92.
Additional information
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 34, No. 2, pp. 329–334, February, 1981.
Rights and permissions
About this article
Cite this article
Seleznev, B.I., Moskalev, G.Y. & Tkal', V.A. Effects of ion implantation on the structures of silicon dioxide films made by various methods. J Appl Spectrosc 34, 237–241 (1981). https://doi.org/10.1007/BF00635215
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00635215