Abstract
Ultrathin gate oxides (90–300 Å) have been grown on silicon under dry oxygen using a lamp light heater. The oxidation kinetics is quite different from that expected in conventional furnace oxidation since the process is shown to be diffusion limited.
Infrared absorption analysis shows neither shift nor broadening of the Si-O stretching mode, indicating that the rapid oxide is stoichiometric with a good structural order. The electrical characteristics of Al-gate capacitors assessed byC-V andG-V measurements with thickness as parameter shows a good quality for oxide films thinner than 100 Å. For thicknesses higher than this value, cleaning techniques and post-oxidation annealing must be used.
Similar content being viewed by others
References
R.H. Dennard, F.H. Gaensslen, E.J. Walter, P.W. Cook: IEEE Trans. ED-26, 325 (1979)
T.L. Chou, J.R. Szedou, C.H. Lee: Solid State Electron.10, 897 (1967)
E.A. Irene: J. Electrochem. Soc.125, 1708 (1978)
J. Nulman, J.P. Krusius, A. Gat: IEEE EDL-6, 205 (1985)
J.P. Ponpon, J.J. Grob, A. Grob, R. Stuck: J. Appl. Phys.59, 3921 (1986)
B.E. Deal, A.S. Grove: J. Appl. Phys.36, 3770 (1965)
Y. Sato, K. Kiuchi: J. Electrochem. Soc.133, 652 (1986)
N. Chan Tung, Y. Caratini, L. Liauzu:Dielectric layers in Semiconductors: Novel Technologies and Devices, ed. by G.G. Bentini, E. Fogarassy, A. Golanski (Les Editions de Physique, EMRS 1986)
A.M. Hodge, C. Pickering, A.J. Pidduck, R.W. Hardema:Layered structures, Epitaxy and Interfaces, ed. by J.M. Gibson, L.R. Dawson, (MRS proc. 1985)
W.A. Pliskin, A. Lehmann: J. Electrochem. Soc.112, 1013 (1965)
L. Schumann, H.S. Lehmann, H. Sobotta, V. Riede, U. Teschner, K. Hubner: Phys. Stat. Sol. B110, K69 (1982)
J. Wong: J. Appl. Phys.44, 5629 (1973)
S.M. Sze:Physics of Semiconductor Devices, 2nd ed. (Wiley, New York 1981) p. 397
E.H. Nicollian, J.R. Brews:MOS (Metal-Oxide-Semiconductor Physics and Technology (Wiley, New York 1982) pp. 784–785
H.F. Wolf:Silicon Semiconductor Data (Pergamon, New York 1969) p. 280
S. Kar, D. Shanker, K.S. Chari: Appl. Phys. Lett.47, 1203 (1985)
B.E. Deal, M. Sklar, A.S. Grove, E.H. Snow: J. Electrochem. Soc.114, 266 (1967)
E.H. Nicollian, J.R. Brews: In Ref. 13] pp. 785–791
J. Nulman, J.P. Krusius, P. Reuteln:Rapid Thermal Processing, ed. by T.O. Sedgwick, T.E. Seidel, B.Y. Tsaur (MRS proc. 1986)