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Applied Physics A

, Volume 44, Issue 2, pp 191–194 | Cite as

Surface photovoltage measurement in MOS structures

  • K. Pater
Surfaces, Interfaces, and Layer Structures

Abstract

A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity. Two groups of surface states beginning at E t 1 = Ev + 0.25 eV and E t 2 = Ec − 0.30 eV in the oxide-silicon interface of the investigated structures had been found.

PACS

07.50 73.40 

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Copyright information

© Springer-Verlag 1987

Authors and Affiliations

  • K. Pater
    • 1
  1. 1.Institute of PhysicsTechnical University of WrocławWrocławPoland

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