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Photoinduced refractive index changes and photoluminescence in semiconductor-doped glasses

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Abstract

Transient refractive index changes of Cd(S, Se)-glasses induced by 10 ns laser pulses at 532 nm are determined from time-resolved transmission measurements of a Fabry-Perot interferometer containing samples of the semiconductor glass. Comparison of the transient index measurements with time-resolved photoluminescence supports an electron-hole-plasma model and suggests that the relaxation mechanism is Auger recombination of the electrons and the holes.

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Nattermann, K., Danielzik, B. & von der Linde, D. Photoinduced refractive index changes and photoluminescence in semiconductor-doped glasses. Appl. Phys. A 44, 111–118 (1987). https://doi.org/10.1007/BF00626410

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