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High-field transport properties of In0.765Ga0.235As0.5P0.5

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Abstract

Monte-Carlo results on the velocity-field characteristics, ac diffusion-constant and thermal-noise voltages are presented for In0.765Ga0.235As0.5P0.5 at 300K. Recently available values of physical constants have been used in the calculations. The values of diffusion constants are close to those of InP but the thermal noise voltages are found to increase faster with the field. The peak velocity is 1.9 × 107 cm/s and the threshold field for negative differential mobility is about 6 kV/cm.

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References

  1. M.A. Littlejohn, J.R. Hauser, T.H. Glisson: Appl. Phys. Lett.30, 242 (1977)

    Google Scholar 

  2. S.K. Sutradhar, D. Chattopadhyay, B.R. Nag: Phys. Rev. B25, 4069 (1982)

    Google Scholar 

  3. Y. Yamazoe, T. Nishino, Y. Hamakawa, T. Kariya: Jpn. J. Appl. Phys.19, 1473 (1980)

    Google Scholar 

  4. See references given in [2]

    Google Scholar 

  5. D.K. Ferry: Advances in Electronics and Electron Physics58, 311 (1982)

    Google Scholar 

  6. J.A. Van Vechten, T.K. Berstresser: Phys. Rev. B1, 3351 (1970)

    Google Scholar 

  7. R.J. Nicholas, J.C. Portal, C. Houlberg, P. Perrier, T.P. Pearsall: Appl. Phys. Lett.34, 492 (1979)

    Google Scholar 

  8. E.H. Perea, E. Mendez, C.G. Fonstad: J. Electron. Mater.9, 459 (1980)

    Google Scholar 

  9. R.L. Moon, G.A. Antypas, L.W. James: J. Electron. Mater.3, 635 (1974)

    Google Scholar 

  10. A. Pinczuk, J.M. Worlock, R.E. Nahory, M.A. Pollack: Appl. Phys. Lett.33, 461 (1978)

    Google Scholar 

  11. A.S. Barker: Phys. Rev.145, 391 (1966)

    Google Scholar 

  12. J.W. Harrison, J.R. Hauser: J. Appl. Phys.47, 292 (1976)

    Google Scholar 

  13. M. Deb Roy, B.R. Nag: Appl. Phys. A26, 131 (1981)

    Google Scholar 

  14. M. Deb Roy, B.R. Nag: Appl. Phys. A28, 195 (1982)

    Google Scholar 

  15. B.R. Nag, M. Deb Roy: Appl. Phys. A29, 45 (1982)

    Google Scholar 

  16. P.A. Houston: J. Mater. Sci.16, 2935 (1981)

    Google Scholar 

  17. J. Pozela, A. Reklaitis: Solid State Commun.27, 1073 (1978)

    Google Scholar 

  18. G. Hill, P.N. Robson, W. Fawcett: J. Appl. Phys.50, 359 (1979)

    Google Scholar 

  19. M. Deb Roy, B.R. Nag: Appl. Phys. A30, 189 (1983)

    Google Scholar 

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Deb Roy, M., Nag, B.R. & Chattopadhyay, D. High-field transport properties of In0.765Ga0.235As0.5P0.5 . Appl. Phys. A 32, 39–43 (1983). https://doi.org/10.1007/BF00626132

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  • DOI: https://doi.org/10.1007/BF00626132

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