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Mismatch and electron mobility in MBE GaxIn1−xas epitaxial layers on InP substrates

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Abstract

Composition inhomogeneity in nearly matched epilayers of the ternary semiconductor alloy GaxIn1−xAs (x close to 0.47), grown by molecular beam epitaxy (MBE) on (001) InP substrates is correlated to variation of the lattice mismatch by x-ray imaging and local diffractometry. Misfit dislocations are shown to develop in areas of large misfit (above 2 × 10−3) and are at the origin of a severe degradation of the electron mobility: an increase by a factor of about 4 in the intrinsic misfit (2.3 × 10−3 compared to 0.6 × 10−3) results in a 35 % reduction of the 77 K electron mobility.

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Authors and Affiliations

  1. Laboratoire Physique du Solide et Energie Solaire, CNRS-Sophia Antipolis, Rue Bernard Grégory, F-06560, Valbonne, France

    J. Massies

  2. Laboratoire de Minéralogie-Cristallographie, 4, Place Jussieu, F-75230, Paris Cedex 05, France

    M. Sauvage-Simkin

  3. L.U.R.E., Bâtiment 209C, Accélérateur Linéaire, F-91405, Orsay, France

    M. Sauvage-Simkin

Authors
  1. J. Massies
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  2. M. Sauvage-Simkin
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Part of this work has been done while this author was with Thomson-CSF Central Research Laboratory, Orsay, France

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Massies, J., Sauvage-Simkin, M. Mismatch and electron mobility in MBE GaxIn1−xas epitaxial layers on InP substrates. Appl. Phys. A 32, 27–30 (1983). https://doi.org/10.1007/BF00626130

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