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Optical and Quantum Electronics

, Volume 24, Issue 2, pp S177–S192 | Cite as

GaAs multiple quantum well microresonator modulators grown on silicon substrates

  • P. Barnes
  • K. Woodbridge
  • C. Roberts
  • A. A. Stride
  • A. Rivers
  • M. Whitehead
  • G. Parry
  • X. Zhang
  • A. Staton-Bevan
  • J. S. Roberts
  • C. Button
Papers

Abstract

We report new results on the modulation characteristics of GaAs/AlGaAs asymmetric Fabry-Perot modulators grown on silicon substrates. We discuss factors affecting device performance and evaluate these by growing p-i-n quantum well diodes, and multilayer reflector stacks on silicon. Using data from these test structures we have designed an asymmetric microresonator modulator and achieve, experimentally, a 40% reflection change with only 5 V and a contrast ratio of 7.4 dB, also with 5 V.

Keywords

Silicon Reflection GaAs Communication Network Silicon Substrate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • P. Barnes
    • 1
  • K. Woodbridge
    • 1
  • C. Roberts
    • 1
  • A. A. Stride
    • 1
  • A. Rivers
    • 1
  • M. Whitehead
    • 1
  • G. Parry
    • 1
  • X. Zhang
    • 2
  • A. Staton-Bevan
    • 2
  • J. S. Roberts
    • 3
  • C. Button
    • 3
  1. 1.Department of Electronic and Electrical Engineering, University College LondonUniversity of London Interdisciplinary Research Centre for Semiconductor MaterialsLondonUK
  2. 2.Department of Materials, Imperial College of Science, Technology and MedicineUniversity of London Interdisciplinary Research Centre for Semiconductor MaterialsLondonUK
  3. 3.SERC Central Facility for III-V MaterialsUniversity of SheffieldSheffieldUK

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