Microwave surface resistance and power dependence of thallium-based films deposited onto large-area silver substrates

Abstract

Microwave surface resistance (R _s ) measurements on large-area (11.4 cm²) Tl-based films deposited onto Ag (Consil 995) substrates have been made at a frequency of 18 GHz as a function of temperature. Deposition onto unoriented Ag substrates yields unoriented films characterized byR _s values of 8.2 and 33.6 mΩ at 10.6 and 77 K, respectively. In contrast, similar deposition onto oriented Ag substrates yields oriented films with values of 12.6 and 14.6 mΩ at 11.2 and 77 K, respectively; corresponding Cu values are 9 and 21 mΩ. Additionally, it is found that the dependence ofR _s on microwave surface magnetic fieldH _s is weaker for the oriented films. These results suggest that the effect of orienting thec-axis in Tl films is twofold: (1) the high-frequency superconducting transition is made considerably sharper, resulting in a lowerR _s value at 77 K, and (2) the rate of increase inR _s with appliedH _s is reduced. Both effects have significant ramifications for the potential application of these materials to high-frequency accelerating cavities.