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Spectroscopy of isoelectronic nitrogen impurities in epitaxial structures based on GaP

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 35, No. 5, pp. 844–850, November, 1981.

In conclusion, we thank M. V. Chukichev for making it possible to measure the lowtemperature cathode-luminescence spectra, M. Yu. Shutov for carrying out the measurements of the diffusion lengths of the minority charge carriers, and L. N. Gurkov for some valuable comments.

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Ermakov, O.N., Sushkov, V.P. Spectroscopy of isoelectronic nitrogen impurities in epitaxial structures based on GaP. J Appl Spectrosc 35, 1237–1242 (1981). https://doi.org/10.1007/BF00624122

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  • DOI: https://doi.org/10.1007/BF00624122

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