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Applied Physics A

, Volume 39, Issue 3, pp 163–166 | Cite as

Electron emission from insulator and semiconductor surfaces by multiphoton excitation below the optical damage threshold

  • W. J. Siekhaus
  • J. H. Kinney
  • D. Milam
  • L. L. Chase
Contributed Papers

Abstract

Electron emission due to 1.06 and 0.35 μm laser excitation has been measured at several pulse lengths for a number of wide bandgap semiconductors and insulators. The dependence on fluence and wavelength is consistent with multiphoton excitation across the bandgap. The work functions of the materials investigated do not appear to influence the rate-limiting multiphoton excitation process.

PACS

79.40 79.60 

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References

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    See, for example, V.P. Krutyakova, V.N. Smirnov: Sov. Phys. Tech. Phys.24, 1085 (1979) and references thereinGoogle Scholar
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    W.L. Smith, A.J. DeGroot, M.J. Weber: Appl. Opt.17, 3938 (1978)Google Scholar
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    N.H. Tolk, L.C. Feldman, J.S. Kraus, R.J. Morris, M.M. Traum, J.C. Tully: Phys. Rev. Lett.46, 134 (1981)Google Scholar
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    V.S. Fomenko:Handbook of Thermionic Properties (Plenum Press Data Division, New York 1966)Google Scholar
  5. 5.
    For a review of optical damage mechanisms see W.L. Smith: Opt. Engg.17, 489 (1978)Google Scholar

Copyright information

© Springer-Verlag 1986

Authors and Affiliations

  • W. J. Siekhaus
    • 1
  • J. H. Kinney
    • 1
  • D. Milam
    • 1
  • L. L. Chase
    • 1
  1. 1.Lawrence Livermore National LaboratoryUniversity of CaliforniaLivermoreUSA

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