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Photoluminescence of AlxGa1−xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy

II. Intrinsic free-exciton nature of quantum well luminescence

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  1. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000, Stuttgart 80, Germany

    H. Jung, A. Fischer & K. Ploog

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  1. H. Jung
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  2. A. Fischer
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  3. K. Ploog
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Jung, H., Fischer, A. & Ploog, K. Photoluminescence of AlxGa1−xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy. Appl. Phys. A 35, 130 (1984). https://doi.org/10.1007/BF00620643

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  • DOI: https://doi.org/10.1007/BF00620643

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