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Computer studies on the space charge dependence of avalanche zone width and conversion efficiency, of single driftp +nn+ andn +pp+ indium phosphide impatts

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Abstract

The effect of mobile space charge on avalanche zone width and conversion efficiency of single drift region (SDR) indium phosphide impatts at 12 and 60 GHz has been investigated. The results show thatp +nn+ InP diodes have a narrower avalanche zone and a higher conversion efficiency compared ton +pp+ diodes for both the frequencies at normal operating current densities. The expansion of avalanche zone and efficiency degradation at high current levels are more pronounced inp +nn+ at 12 GHz and inn +pp+ at 60 GHz.

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Authors and Affiliations

  1. Centre of Advanced Study in Radiophysics and Electronics, Calcutta University, 1 Girish Vidyaratna Lane, 700 009, Calcutta, India

    J. P. Banerjee, S. P. Pati & S. K. Roy

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  1. J. P. Banerjee
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  2. S. P. Pati
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  3. S. K. Roy
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Banerjee, J.P., Pati, S.P. & Roy, S.K. Computer studies on the space charge dependence of avalanche zone width and conversion efficiency, of single driftp +nn+ andn +pp+ indium phosphide impatts. Appl. Phys. A 35, 125–129 (1984). https://doi.org/10.1007/BF00620642

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  • DOI: https://doi.org/10.1007/BF00620642

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