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The effects of arsenic source contamination on doped GaAs grown by MBE

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Abstract

The presence of parts per million (ppm) levels of impurities in the low-temperature arsenic charge used in molecular beam epitaxy (MBE) is shown to have a dramatic effect on the quality of GaAs grown. Source charge impurities play a vital role in determining the apparent variation in reported doping behaviour in MBE:GaAs.

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Authors and Affiliations

  1. Physics Department, City of London Polytechnic, 31, Jewry Street, EC3N 2EY, London, UK

    R. A. A. Kubiak & E. H. C. Parker

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  1. R. A. A. Kubiak
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  2. E. H. C. Parker
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Kubiak, R.A.A., Parker, E.H.C. The effects of arsenic source contamination on doped GaAs grown by MBE. Appl. Phys. A 35, 75–77 (1984). https://doi.org/10.1007/BF00620633

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  • DOI: https://doi.org/10.1007/BF00620633

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