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Contribution to time-resolved enhanced chemical etching and simultaneous annealing of ion implantation amorphized silicon under intense laser irradiation

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Abstract

Surfaces of single-crystal silicon wafers are amorphized by high-dose phosphorous ion implantation. These surfaces of the wafers, immersed in concentrated KOH, are laser-chemically etched by pulse irradiation of a ruby laser. Simultaneously, the remaining parts of the amorphous layer are annealed. The time dependence of the etching process enhanced during pulse irradiation is recorded and analysed. Reasons for the etching rates which differ between amorphous and single-crystal silicon are given on the basis of experimental and numerical results.

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Author notes

  1. E. F. Krimmel

    Present address: Siemens AG, Research Laboratories, D-8000, München 83, Germany

Authors and Affiliations

  1. Rand Afrikaans University, Johannesburg, Rep. South Africa

    E. F. Krimmel, A. G. K. Lutsch & R. Swanepoel

  2. Council of Scientific and Industrial Research, Pretoria, Rep. South Africa

    J. Brink

Authors
  1. E. F. Krimmel
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  2. A. G. K. Lutsch
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  3. R. Swanepoel
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  4. J. Brink
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Krimmel, E.F., Lutsch, A.G.K., Swanepoel, R. et al. Contribution to time-resolved enhanced chemical etching and simultaneous annealing of ion implantation amorphized silicon under intense laser irradiation. Appl. Phys. A 38, 109–115 (1985). https://doi.org/10.1007/BF00620461

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  • DOI: https://doi.org/10.1007/BF00620461

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