Abstract
Infrared reflectivity measurements on vapour phase grownn-GaAs epitaxial layers (n=7×1016...5×1018 cm−3) deposited on semi-insulating GaAs:Cr substrates show interference structures whose strength cannot be explained by the interference pattern of a simple two layer system. Assuming a third very thin (0.4 μm) interfacial layer it is possible to describe the experimental results. For Te doping the carrier concentration in the interfacial film is higher than in the volume of the epitaxial layer; it is lower for Sn doping. The results of this nondestructive optical method were confirmed by conductivity measurements while etching the sample. The origin of the interfacial layer is discussed in terms of non-steady state conditions at the beginning of the epitaxial growth.
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Nowak, U., Saalmüller, J., Richter, W. et al. Characterisation of the interface between GaAs: Cr substrates andn-type epitaxial GaAs layers by infrared multiple interference analysis. Appl. Phys. A 35, 27–34 (1984). https://doi.org/10.1007/BF00620296
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DOI: https://doi.org/10.1007/BF00620296