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Dynamical thermal properties of broad-contact double-heterostructure GaAs-(AIGa)As laser diodes

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Abstract

The dynamical thermal properties of broad-contact double-heterostructure GaAs — (AIGa)As laser diodes are presented in this paper. For short current pulses (t ≪ 0.5μs), the nonlinear, time-dependent thermal conduction equation has been reduced to a linear one by means of a space transformation. The transformation has substituted the nonhomogeneous GaAs — (AIGa)As structure by the homogeneous GaAs one. Except for active layer heating due to nonradiative recombination and partial reabsorption of radiation, the radiative transfer of the spontaneous radiation through the wide-gap passive layers and the Joule heating effect have been taken into account. The model may be used to some extent for high-power stripe-geometry laser diodes with a relatively wide stripe active region.

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References

  1. W. Nakwaski,Opt. Quant. Elect. 11 (1979) 319–27.

    Google Scholar 

  2. W. Engeler andM. Garfinkel,Solid-State Elect. 8 (1965) 585–604.

    Google Scholar 

  3. M. A. Afromowitz,J. Appl. Phys. 44 (1973) 1292–4.

    Google Scholar 

  4. D. E. Gray (ed.), American Institute of Physics Handbook, (McGraw-Hill Book Company, New York, 1972).

    Google Scholar 

  5. W. Nakwaski,Elect. Technol. 10 No. 2 (1977) 47–62.

    Google Scholar 

  6. Idem, to be printed.

  7. Idem, ‘Scientific Bulletin of Łodz Technical University, Physics’ (1983) in press.

  8. H. C. Torrey andCh. A. Whitmer, ‘Crystal Rectifiers’, (McGraw-Hill Book Company, Inc., New York and London, 1948), p. 427.

    Google Scholar 

  9. H. C. Casey Jr andM. B. Panish, ‘Heterostructure lasers. Part B: Materials and Operating Characteristics’ (Academic Press, New York, San Francisco and London, 1978) p. 235.

    Google Scholar 

  10. R. Ito, M. Suyama andN. Ogasawara,J. Faculty Eng. 36 (1981) 47–58.

    Google Scholar 

  11. M. Suyama, N. Ogasawara andR. Ito,Jpn. J. Appl. Phys. 20 (1981) L395–8.

    Google Scholar 

  12. T. Kobayashi andY. Furukawa,ibid. 14 (1975) 1981–86.

    Google Scholar 

  13. W. Nakwaski,Sov. J. Quantum. Elect. 9 (1979) 1544–6 (see alsoKvantovaya Élektronika 6 (1979) 2609–12).

    Google Scholar 

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Authors and Affiliations

  1. Institute of Physics, Technical University of Łódź, ul., Wólczańska 219, 93-005, Łódź, Poland

    Włodzimierz Nakwaski

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  1. Włodzimierz Nakwaski
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Nakwaski, W. Dynamical thermal properties of broad-contact double-heterostructure GaAs-(AIGa)As laser diodes. Opt Quant Electron 15, 313–324 (1983). https://doi.org/10.1007/BF00619901

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  • DOI: https://doi.org/10.1007/BF00619901

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