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Remarkable effects of uniaxial stress on stimulated far IR emission from hot holes in germanium in crossed electric and magnetic fields

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Abstract

Stimulated far IR emission due to l-h as well as cyclotron transitions of hot holes in uniaxially stressedp-Ge (P ∥H ⊥E) was studied. The results obtained showed the significance of intersub-band hole tunnelling for these mechanisms of generation and may be explained by a change in tunnelling produced by the stress. A considerable expansion of the stimulated light hole cyclotron emission band was observed in a stressed crystal. This expansion allows covering (in one sample) of all generation bands in the light hole cyclotron resonance (CR) masers in unstressedp-Ge, reported so far.

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Authors and Affiliations

  1. Institute of Applied Physics of the USSR Academy of Sciences, 46 Uljanov Street, 603600, Gorky, USSR

    V. I. Gavrilenko & V. V. Nikonorov

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  1. V. I. Gavrilenko
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  2. V. V. Nikonorov
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Gavrilenko, V.I., Nikonorov, V.V. Remarkable effects of uniaxial stress on stimulated far IR emission from hot holes in germanium in crossed electric and magnetic fields. Opt Quant Electron 23, S217–S220 (1991). https://doi.org/10.1007/BF00619768

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  • DOI: https://doi.org/10.1007/BF00619768

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