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Hot hole inter-sub-band transition p-Ge FIR laser

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Abstract

This paper presents a review of operating principles, numerical results and the achieved characteristics of the hot hole FIR laser. The problems of Landau quantization and crystallographic anisotropy are discussed. This information gives an idea of the achievements and difficulties of the development of far-infrared (FIR) semiconductor lasers using hot hole inter-sub-band transitions inp-Ge.

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  1. Institute of Applied Physics, USSR Academy of Sciences, 46 Uljanov Street, 603600, Gorky, USSR

    V. N. Shastin

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Shastin, V.N. Hot hole inter-sub-band transition p-Ge FIR laser. Opt Quant Electron 23, S111–S131 (1991). https://doi.org/10.1007/BF00619761

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