Abstract
Waveguided semiconductor optical switches operated by a carrier-induced change in the refractive-index associated with the plasma dispersion are proposed. InGaAsP/InP four-port switches having two intersecting single-mode channel waveguides are fabricated by selective liquid-phase epitaxy and investigated at 1.5μm wavelength. Optical switching is observed as a result of mode interference in the waveguide intersection region.
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Mikami, O., Nakagome, H. InGaAsP/InP optical waveguide switch operated by a carrier-induced change in the refractive index. Opt Quant Electron 17, 449–455 (1985). https://doi.org/10.1007/BF00619572
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DOI: https://doi.org/10.1007/BF00619572