Abstract
Semiconductor response to ultrafast electric pulses was investigated both theoretically and experimentally. The possibilities for hot-electron drift velocity estimation from a pulsed electric conductivity measurement were analysed. An optoelectronic arrangement with time resolution of 20 ps was used to perform such measurements on then-InSb andn-InAs single crystals. Negative differential mobility (n.d.m.) was observed in both semiconductors at high electric fields.
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Dobrovolskis, Z., Grigoras, K. & Krotkus, A. Measurement of the hot-electron conductivity in semiconductors using ultrafast electric pulses. Appl. Phys. A 48, 245–249 (1989). https://doi.org/10.1007/BF00619393
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DOI: https://doi.org/10.1007/BF00619393