Applied Physics A

, Volume 48, Issue 3, pp 229–232 | Cite as

Silicide formation by furnace annealing of thin Si films on large-grained Ni substrates

  • A. J. Brunner
  • E. Ma
  • M. -A. Nicolet
Solids and Materials

Abstract

Si films with a thickness of approximately 250 nm have been electron-beam evaporated on thick, large-grained Ni substrates (grain size a few mm to 1 cm in diameter). An in situ sputter cleaning procedure has been used to clean the Ni surface before the Si deposition. Thermal annealings have been performed in a vacuum furnace. Ni2Si is the first phase that grows at temperatures between 240 °C and 300 °C as a laterally uniform interfacial layer with a diffusion-controlled kinetics. The layer thicknessx follows the growth lawx2=kt, withk=k0 exp(-EakBT), wherek0=6.3 × 10−4cm 2/s andEa=(1-1±0.1) eV. Because of the virtually infinite supply of Ni, annealing at 800 °C for 130min yields a Ni-based solid solution as the final phase. The results are compared with those reported in the literature on suicide formation by the reaction of a thin Ni film on Si substrates, as well as with those for interfacial phase formation in Ni/Zr bilayers.

PACS

61.70.Ng 68.90.+g 81.90.+c 

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Copyright information

© Springer-Verlag 1989

Authors and Affiliations

  • A. J. Brunner
    • 1
  • E. Ma
    • 1
  • M. -A. Nicolet
    • 1
  1. 1.California Institute of TechnologyPasadenaUSA

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