Abstract
The tunneling current-voltage characteristics of Ti-silicide/p− Si/p+ Si Schottky diodes are analyzed to study the Ti/Si interface properties. By using an MBE-grown 7 nm p− Si spacer layer, well-defined tunneling structures are obtained. The sharply peaked density of states in a Ga-impurity band is used as a tunneling probe. A state density gap 100 meV around the Fermi energy is observed for a rapidly (20s) annealed (T=550°C) reacted sample. The gap is interpreted by a Ti-rich interfacial silicide film of about 1 nm.
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