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Optical and Quantum Electronics

, Volume 7, Issue 6, pp 474–480 | Cite as

Photoelectrical resonant gate transistor (PRGT)

  • J. Burov
  • V. Hinkov
Papers

Abstract

PRGT is a photosensitive device with resonant properties compatible with the elements of microelectronics and integrated optics. The photosensitive element is a single crystal platelet of CdS, the mechanical resonance of which determines the resonant frequency of the device. The flexural mechanical vibrations of the platelet excited from an a.c. light flux are detected and converted into an electrical signal by means of a MOS-transistor. Without optimization of the parameters of the device a mean value of the sensitivity as high as 3 A lm−1 was obtained reaching 10 A lm−1 for some devices for frequencies up to 3 kHz. A low frequency analyser for a laser Doppler anemometer is also described.

Keywords

Communication Network Resonant Frequency Frequency Analyser Electrical Signal Mechanical Vibration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    W. E. Newell,Proc. IEEE 52 (1964) 1603.Google Scholar
  2. 2.
    H. C. Nathanson, W. E. Newell, R. A. Wickstom andJ. R. Davis,IEEE 14 (1963) 117–123.Google Scholar
  3. 3.
    W. E. Newell, U.S. Pat. No. 3,634,787.Google Scholar
  4. 4.
    R. J. Wilfinger, D. S. Chhabra andP. H. Bardell,Proc. IEEE 54 (1966) 1589–1591.Google Scholar
  5. 5.
    M. E. Gerzenstein andV. I. Pustovoit,Fiz. tverd. Tela. 6 (1964) 879.Google Scholar
  6. 6.
    I. V. Ioffe andA. M. Kovnatskii,Fiz. Tekh. Poluprov. 1 (1967) 1522.Google Scholar
  7. 7.
    M. I. Borisov, J. I. Burov andK. P. Bransalov,Phys. Stat. Sol. (a)8 (1971) 291.Google Scholar
  8. 8.
    S. S. Devlin, ‘Physics and Chemistry of II–VI Compounds’, ed.M. Aven andI. S. Prener, North-Holland Publishing Company, Amsterdam (1967) 440–447.Google Scholar
  9. 9.
    S. M. Rivkin, ‘Photoelectrical Phenomena in Semiconductors’, Moscow, (1963) pp. 39–42; 66–68.Google Scholar
  10. 10.
    Jean Mercier, ‘Acoustique’, Presses universitaires de France, (1962) Vol. 3 pp. 655–661.Google Scholar
  11. 11.
    M. A. Trishenkov, A. I. Frimer, p-n Junction Photoelectrical Semiconductor Devices, in ‘Semiconductor Devices and Their Application’, ed.I. A. Fedotov, Vol. 25 Moscow (1971) p. 159.Google Scholar
  12. 12.
    N. A. Soboleva, G. A. Berkovskii, N. O. Chechik andR. E. Eliseev, ‘Photoelectronic Devices,’ Moscow, (1965) p. 573.Google Scholar

Copyright information

© Chapman and Hall 1975

Authors and Affiliations

  • J. Burov
    • 1
  • V. Hinkov
    • 2
  1. 1.Faculty of Physics, Department of Solid State PhysicsSofia UniversitySofiaBulgaria
  2. 2.Institute of Solid State PhysicsBulgarian Academy of ScienceSofiaBulgaria

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