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Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

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Abstract

A wet chemical etch preceding the usual cleaning process has been found to yield Schottky barriers of high values on p-type silicon. This procedure produces a passivated surface layer which has resulted in Al/0-Si Schottky diodes with barrier height of 0.75 eV and ideality factor of 1.15. Measurements have confirmed the presence of electrically active donor-like states in this surface layer. The origin of the donor states is explained in terms of the deactivation of the boron acceptor by the formation ofH + B − pairs.

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Author notes

  1. G. A. Adegboyega

    Present address: Department of Electronic and Electrical Engineering, Obafemi Awolowo University, Ile-Ife, Nigeria

Authors and Affiliations

  1. C.N.R. - Istituto LAMEL, Via Castagnoli, 1, I-40126, Bologna, Italy

    G. A. Adegboyega, A. Poggi & E. Susi

  2. GNSM-CISM Group, Institute of Physics, University of Bologna, Via Irnerio 46, I-40126, Bologna, Italy

    A. Castaldini & A. Cavallini

Authors
  1. G. A. Adegboyega
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  2. A. Poggi
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  3. E. Susi
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  4. A. Castaldini
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  5. A. Cavallini
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Adegboyega, G.A., Poggi, A., Susi, E. et al. Schottky contact barrier height enhancement on p-type silicon by wet chemical etching. Appl. Phys. A 48, 391–395 (1989). https://doi.org/10.1007/BF00618904

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  • DOI: https://doi.org/10.1007/BF00618904

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