Abstract
Thin films of rhodium have been prepared starting from dicarbonyl-2.4-pentadionato-rhodium(I), Rh(CO)2C5H7O2, by plasma enhanced CVD. The dependence of the deposition rate and film properties on substrate temperature, partial pressure of the organometallic and on hydrogen has been studied. Metal contents of ≈ 100% and thin-film resistivities as low as 5 times the bulk resistivity of rhodium have been achieved.
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References
G. Haas: J. Opt. Soc. Am.72, 27 (1982)
W.D. Mroß: Umschau 423 (1985)
E. Koberstein: Umschau 163 (1985)
N. Laegreid, G.K. Wehner: J. Appl. Phys.32, 365 (1961)
M.P. Delplancke, P. Delcambe, L. Binst, M. Jardinier-Offergeld, F. Boullion: Thin Solid Films143, 43 (1986)
F.A. Lowenheim: InThin Film Processes, ed. by J.L. Vossen, E. Kern, (Academic, New York 1978) pp. 209–256
A.J. Perry, N.J. Archner: Agard Lect. Ser. No. 106 mat. coat, techn. 4/1–16 (1980)
E. Feurer, H. Suhr: Thin Solid Films157, 81–86 (1988)
E. Feurer, H. Suhr: Appl. Phys. A44, 171–175 (1987)
E. Feurer, S. Kraus, H. Suhr: Submitted to J. Vac. Sci. Technol. A
C. Haag, H. Suhr: Appl. Phys. A47, 199–203 (1988)
O.W. Hess: Ann. Rev. Mat. Sci.16, 163 (1986)
Handbook of Chemistry and Physics 57th edn. (CRC Press, Cleveland, Ohio 1976)
L.I. Maissel: InHandbook of Thin Film Technology, ed. by L.I. Maissel, R. Glang (McGraw-Hill, New York 1970) Chapt. 13, p. 1–33
M.A. Angadi, L.A. Udachan: Thin Solid Films79, 149 (1981)
J.A. Venables, G.D.T. Spiller, M. Hanbucken: Rep. Prog. Phys.47, 399 (1984)