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Noise characteristics of a superlattice avalanche photodiode

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Abstract

The noise generated due to randomness of multiplication process in the avalanche region of an Al x Ga1−x As/GaAs quantum well p+-i-n+ structure has been studied. The paper presents a quantitative evaluation of the noise performance of the superlattice APD which has not been done so far. Further, useful design data for low noise structure is given.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Birla Institute of Technology, 835215, Mesra, Ranchi, India

    P. Chakrabarti

  2. Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, 221005, Varanasi, India

    S. C. Choudhury & B. B. Pal

Authors
  1. P. Chakrabarti
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  2. S. C. Choudhury
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  3. B. B. Pal
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Chakrabarti, P., Choudhury, S.C. & Pal, B.B. Noise characteristics of a superlattice avalanche photodiode. Appl. Phys. A 48, 331–334 (1989). https://doi.org/10.1007/BF00618894

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  • DOI: https://doi.org/10.1007/BF00618894

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