Applied Physics A

, Volume 47, Issue 2, pp 123–129 | Cite as

Spatial distribution of impurities in delta-doped n-type GaAs

  • B. Ullrich
  • E. F. Schubert
  • J. B. Stark
  • J. E. Cunningham
Solids and Materials

Abstract

Capacitance-voltage (CV) profiling measurements on delta-doped n-type GaAs reveal extremely narrow peaks with a full-width at half-maximum of 40 Å. Comparison of experimental with self-consistently calculated CV profiles demonstrates that Si impurities are localized on a length scale of a lattice constant in delta-doped GaAs. Diffusion and segregation are of minor importance. The basic theory of CV measurements on quantummechanical systems such as delta-doped semiconductors is developed and presented.

PACS

81.10 73.60 75.30 

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Copyright information

© Springer-Verlag 1988

Authors and Affiliations

  • B. Ullrich
    • 1
  • E. F. Schubert
    • 2
  • J. B. Stark
    • 3
  • J. E. Cunningham
    • 4
  1. 1.Max-Planck-Institute for Solid State ResearchStuttgartGermany
  2. 2.AT&T Bell LaboratoriesMurray HillUSA
  3. 3.Massachusetts Institute of TechnologyCambridgeUSA
  4. 4.AT&T Bell LaboratoriesHolmdelUSA

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