Applied Physics A

, Volume 47, Issue 2, pp 123–129 | Cite as

Spatial distribution of impurities in delta-doped n-type GaAs

  • B. Ullrich
  • E. F. Schubert
  • J. B. Stark
  • J. E. Cunningham
Solids and Materials


Capacitance-voltage (CV) profiling measurements on delta-doped n-type GaAs reveal extremely narrow peaks with a full-width at half-maximum of 40 Å. Comparison of experimental with self-consistently calculated CV profiles demonstrates that Si impurities are localized on a length scale of a lattice constant in delta-doped GaAs. Diffusion and segregation are of minor importance. The basic theory of CV measurements on quantummechanical systems such as delta-doped semiconductors is developed and presented.


81.10 73.60 75.30 


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  1. 1.
    C.E.C. Wood, G.M. Metzi, J.D. Berry, L.F. Eastman: J. Appl. Phys.51, 383 (1980)Google Scholar
  2. 2.
    E.F. Schubert, K. Ploog: Jpn. J. Appl. Phys. Lett.24, L608 (1985)Google Scholar
  3. 3.
    E.F. Schubert, J.E. Cunningham, W.T. Tsang: Solid State Commun.63, 591 (1987)Google Scholar
  4. 4.
    E.F. Schubert, J.E. Cunningham, W.T. Tsang, G.L. Timp: Appl. Phys. Lett.51, 1170 (1987)Google Scholar
  5. 5.
    T. Ishikawa, K. Ogasawara, T. Nakamusa, S. Kuroda, K. Kondo: J. Appl. Phys.61, 1937 (1987)Google Scholar
  6. 6.
    E.F. Schubert, A. Fischer, Y. Horikoshi, K. Ploog: Appl. Phys. Lett.47, 219 (1985)Google Scholar
  7. 7.
    E.F. Schubert, A. Fischer, K. Ploog: Electron. Lett.21, 411 (1985)Google Scholar
  8. 8.
    H. Kroemer, W.-Y. Chien, J.S. Harris, Jr., D.D. Edwall: Appl. Phys. Lett.36, 295 (1980)Google Scholar
  9. 9.
    E.F. Schubert, K. Ploog: Jpn. Appl. Phys.25, 966 (1986)Google Scholar
  10. 10.
    H. Lee, W.J. Schaff, G.W. Wicks, L.F. Eastman, A.R. Calawa: Inst. Phys. Conf. Ser.74, 321 (1985)Google Scholar
  11. 11.
    A. Zrenner, F. Koch, K. Ploog: Proceedings of the Seventh International Conference on Electronic Properties of Two-Dimensional Systems, Santa Fe (1987); to be published in Surface Science (1988)Google Scholar
  12. 12.
    J.E. Cunningham: UnpublishedGoogle Scholar
  13. 13.
    Many-body effects are not significant for high concentrations, because the average kinetic energy exceeds the average interaction energy. See: T. Ando, A.B. Fowler, F. Stern: Rev. Mod. Phys.54, 437 (1982)Google Scholar
  14. 14.
    Even narrower CV profiles can be obtained with a p-type background concentration, due to a stronger localization of carriers in an inversion layer as compared to an accumulation layer. See also N. Kobayashi, T. Makinoto and Y. Horikoshi: Jpn. J. Appl. Phys.25, L746 (1986)Google Scholar

Copyright information

© Springer-Verlag 1988

Authors and Affiliations

  • B. Ullrich
    • 1
  • E. F. Schubert
    • 2
  • J. B. Stark
    • 3
  • J. E. Cunningham
    • 4
  1. 1.Max-Planck-Institute for Solid State ResearchStuttgartGermany
  2. 2.AT&T Bell LaboratoriesMurray HillUSA
  3. 3.Massachusetts Institute of TechnologyCambridgeUSA
  4. 4.AT&T Bell LaboratoriesHolmdelUSA

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