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Si etching affected by ir laser irradiation

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Abstract

Silicon was etched in an aqueous solution of sodium hydroxide under ir laser irradiation. Two types of lasers were used, a Nd:YAG laser with a wavelength of λ=1.06 μm and a CO2 laser with λ=10.6 μm. Small-size blind holes, through holes and reliefs were formed on a Si target, and even a special type of hole can be formed with help of a CO2 laser, namely a blind hole with a hillock in its center.

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Bunkin, F.V., Luk'yanchuk, B.S., Shafeev, G.A. et al. Si etching affected by ir laser irradiation. Appl. Phys. A 37, 117–119 (1985). https://doi.org/10.1007/BF00618861

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  • DOI: https://doi.org/10.1007/BF00618861

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