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Direct high-resolution excimer laser photoetching

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Abstract

Direct high-resolution photoetching of various resists and polymers has been demonstrated using an ArF excimer laser at 193 nm. Features as small as 0.3 μm have been produced in 1 μm thick films with no subsequent wet processing steps necessary.

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Authors and Affiliations

  1. IBM Research Laboratory, 95193, San Jose, CA, USA

    S. Rice & K. Jain

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  1. S. Rice
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  2. K. Jain
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Rice, S., Jain, K. Direct high-resolution excimer laser photoetching. Appl. Phys. A 33, 195–198 (1984). https://doi.org/10.1007/BF00618755

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  • DOI: https://doi.org/10.1007/BF00618755

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