Applied Physics A

, Volume 33, Issue 3, pp 167–173 | Cite as

Ion mixing in Al, Si, and their oxides

  • A. J. Barcz
  • M. -A. Nicolet
Contributed Papers


The redistribution of thin metallic markers due to ion irradiation was studied by backscattering spectrometry in Al, Al2O3, Si, and SiO2. Marker species were selected for their similar masses and different chemical reactivities with the host media and included Ti, Fe, W, Pt, and Au. It was found that the marker signals are Gaussian and that the varianceσ2 of the marker atom distributions increases linearly with the dose of the irradiation, is insensitive to the temperature of irradiation in the range of 80–∼300 K, and depends linearly on the nuclear stopping power of the incident ions. The absolute values ofσ2 for Ti, Fe, W, Pt, and Au markers in Al and Al2O3, W, and Pt in SiO2 and W in Si is, within±50 %, of 6.5×103Å2 for 300 keV, 8×1015 Xe ions/cm2. These observations suggest that collisional cascade mixing is a dominant mechanism in this type of impurity-matrix combinations. Only Au and Pt in Si mix at a larger rate:σ2 for Pt is about 3 and for Au about 5 times larger thanσ2 for all other markers. Lower threshold displacement energies and/or the contribution of processes other than cascade mixing are possible considered reasons. In polycrystalline Al, a rapid migration of Au and Pt atoms throughout the Al layer, similar to grain boundary diffusion, is observed.


66.30 jt 79.20.Nc 


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Copyright information

© Springer-Verlag 1984

Authors and Affiliations

  • A. J. Barcz
    • 1
  • M. -A. Nicolet
    • 1
  1. 1.California Institute of TechnologyPasadenaUSA

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