Abstract
In the vicinity of a point contact the Joule's heat production is asymmetrical with respect to the plane of the constricting orifice, provided the contact radius is small compared to the mean-free path of the electrons. This effect is measured onn-type Silicon for a variety of contact radii and explained theoretically. Possible applications for thermoelectric coolers are proposed.
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References
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l=v tm*μ/l=2 nm with estimates for the room-temperature thermal velocity [10]v t= 5×104m/s, an average effective electron mass m*=0.8×10−30kg, and an electron mobility [10] appropriate of the highly doped Si samples ofμ=8×10−2 m2/s
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