Abstract
Evidence for a reaction between aluminium and SiO2 film is presented using Auger electron spectroscopy (AES) and low-energy electron-loss spectroscopy (ELS) techniques. This reaction is studied “in situ” during the manufacture of metal insulator semiconductor devices (MIS), under ultra-high vacuum conditions (UHV). A reduction of the SiO2 film upon aluminization occurs, even at room temperature, giving rise to a complex interface.
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ERA CNRS n° 899
ERA CNRS n° 373
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Derrien, J., Commandré, M., Layet, J.M. et al. Al reaction with SiO2 an auger electron spectroscopy and energy loss spectroscopy study. Appl. Phys. A 28, 247–250 (1982). https://doi.org/10.1007/BF00618702
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DOI: https://doi.org/10.1007/BF00618702