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Photodiodes with a Schottky barrier based on Al-GaAs-AlxGa1−xAs

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Literature cited

  1. V. I. Osinskii, Zh. Prikl. Spektrosk.,21, 849 (1974).

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  2. H. Kasano and S. Hosoki, J. Appl. Phys.,46, No. 1, 394 (1975).

    Google Scholar 

  3. A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions, Academic Press (1972).

  4. A. A. Gutkin, M. V. Dmitriev, D. N. Naseldov, and A. V. Pashkovskii, Fiz. Tekh. Poluprovodn.,5, No. 10, 1927 (1971).

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Authors
  1. V. I. Osinskii
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  2. S. A. Malyshev
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  3. M. P. Ryzhkov
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  4. T. A. Guminskaya
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Additional information

Translated from Zhurnal Prikadnoi Spektroskopii, Vol. 29, No. 1, pp. 173–174, July, 1978.

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Osinskii, V.I., Malyshev, S.A., Ryzhkov, M.P. et al. Photodiodes with a Schottky barrier based on Al-GaAs-AlxGa1−xAs. J Appl Spectrosc 29, 880–881 (1978). https://doi.org/10.1007/BF00618654

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  • DOI: https://doi.org/10.1007/BF00618654

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