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Reproducibility of transition temperature and critical current density of thin films of YBa2Cu3O7 on (100) LaAlO3

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Abstract

Submicrometer epitaxial films of YBa2Cu3O7(YBCO) on (100) LaAlO3 were made by coevaporation and furnace annealing. Samples from more than a dozen runs are used in this study. The zero resistance transition temperature (T c) is high (89 or 90 K) if the film composition is phase pure (Ba/Y=2, Cu/Y=3) or if it is enriched in Ba and Cu. For these compositions the critical current density (J c) at 77 K has an average value of 2×105 A cm−2, with a tendency for decreasingJ c with increasing film thickness (0.2 to 0.8μm). Variations inJ c are not correlated with deviations from ideal stoichiometry. Steeper slopes of the resistance-temperature curves above 100 K and lower values of the room-temperature resistivity are associated with high values ofJ c. If the film composition is enriched in Y relative to Ba and Cu,T c decreases by several degrees.

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  1. GE Research and Development Center, 12301, Schenectady, New York

    A. Mogro-Campero & L. G. Turner

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  1. A. Mogro-Campero
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  2. L. G. Turner
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Mogro-Campero, A., Turner, L.G. Reproducibility of transition temperature and critical current density of thin films of YBa2Cu3O7 on (100) LaAlO3 . J Supercond 4, 61–65 (1991). https://doi.org/10.1007/BF00618299

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