Abstract
Inverted cylindrical magnetron sputtering (ICM) is a reliable and reproducible method for the production of HTSC thin films. This allows systematic studies of film growth as a function of various deposition parameters, including film thickness, substrate material, or buffer layers. After describing in some detail the special demands on sputtering devices for HTSC thin film growth, we report the growth conditions and growth quality of 1–2–3 films of different orientation on substrates such as SrTiO3 and MgO. Furthermore, we report on the growth of buffer layers of YSZ onR-plane sapphire. Epitaxial GdBa2Cu3O7 films grown on these buffer layers showed critical current densities of 3×106 A/cm2 at 77 K and a zero resistance transition temperature of 92.5 K.
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Geerk, J., Linker, G. & Meyer, O. HTSC thin film growth by inverted cylindrical magnetron sputtering. J Supercond 5, 345–351 (1992). https://doi.org/10.1007/BF00618134
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DOI: https://doi.org/10.1007/BF00618134