Applied Physics A

, Volume 28, Issue 3, pp 161–166 | Cite as

A study of electronic states near the interface in ferroelectric-semiconductor heterojunction prepared by rf sputtering of PbTiO3

  • Y. Matsui
  • M. Okuyama
  • M. Noda
  • Y. Hamakawa
Contributed Papers

Abstract

Interface states in the ferroelectric-semiconductor junction have been investigated from analyses of DLTS andC-V data. Two trap levels are located at 0.21 and 0.36 eV below the conduction band near the silicon side of the interface in the MFS (Metal-Ferroelectric-Semiconductor) structure. The interface states density has been drastically reduced by putting an oxide layer between ferroelectric and semiconductor with certain heat treatment in H2 atmosphere at 500 °C. It has been found that the MFMOS (Metal-Ferroelectric-Metal-Oxide-Semiconductor) structure shows the least interface states density (less than 1011cm−2eV−1) with the maximal dielectric constant of PbTiO3 thin films.

PACS

73.20 73.40 79.20 

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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • Y. Matsui
    • 1
  • M. Okuyama
    • 1
  • M. Noda
    • 1
  • Y. Hamakawa
    • 1
  1. 1.Faculty of Engineering ScienceOsaka UniversityOsakaJapan

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