Skip to main content
SpringerLink
Log in

Dielectric and interfacial properties of InP plasma-grown oxides

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Methods of dielectric analysis have been employed to investigate the frequency dispersion of InP-oxide dielectric in MOS and MOM devices. The Cole-Cole empirical method has indicated a wide range of relaxation time for the interfacial polarization. This has been interpreted in terms of a model of carrier injection from the gate metal into the oxide gap states. The model is proposed in conjunction with the anomalous hysteresis in the MOM C-V characteristics and could be applied to other MIS systems.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. H.H. Wieder: J. Vac. Sci. Technol. A2, 97 (1984)

    Google Scholar 

  2. M. Okamura, T. Kabayashi: Jpn. J. Appl. Phys.19, L599 (1980)

    Google Scholar 

  3. K.M. Geib, S.M. Goodnick, D.Y. Lin, R.G. Gann, C.W. Wilmsen: J. Vac. Sci. Technol. B2, 516 (1984)

    Google Scholar 

  4. J.F. Wager, K.M. Geib, C.W. Wilmsen, L.L. Kazmerski: J. Vac. Sci. Technol. B1, 778 (1983)

    Google Scholar 

  5. C.W. Wilmsen, R.W. Kee: J. Vac. Sci. Technol.15, 1513 (1978)

    Google Scholar 

  6. M. Matsui, Y. Hirayama, F. Arai, T. Sugano: IEEE EDL4, 308 (1983)

    Google Scholar 

  7. J.F. Wager, M.D. Clark, R.A. Jullens: J. Vac. Sci. Technol. B2, 584 (1984)

    Google Scholar 

  8. S.N. Al-Refaie, J.E. Carroll: IEE proc., pt. I128, 207 (1981)

    Google Scholar 

  9. S.N. Al-Refaie: Jpn. J. Appl. Phys.27, 273 (1988)

    Google Scholar 

  10. K.E. Forward, H. Hasegawa, H.L. Hartnagel: J. Phys. E8, 487 (1975)

    Google Scholar 

  11. R.M. Hill: Philos. Mag.23, 59 (1971)

    Google Scholar 

  12. P.J. Harrop, D.S. Campbell:Handbook of Thin Film Technology, ed. by L.I. Maissel, R. Glang (McGraw-Hill, New York 1970) Chap. 16

    Google Scholar 

  13. D.H. Laughlin, C.W. Wilmsen: Appl. Phys. Lett.37, 915 (1980)

    Google Scholar 

  14. E.H. Nicollian, A. Goetzberger: Bell Syst. Tech. J.46, 1055 (1967)

    Google Scholar 

  15. A.R. Von Hippel:Dielectric and Waves (MIT, Wiley, New York 1966)

    Google Scholar 

  16. J.F. Wager, C.W. Wilmsen:Physics and Chemistry of III–V Compound Semiconductor Interfaces, ed. by C.W. Wilmsen (Plenum, New York 1985) Chap. 3

    Google Scholar 

  17. C.W. Wilmsen: ibid, Chap. 7

    Google Scholar 

  18. V.V. Danial:Dielectric Relaxation (Academic, New York 1967) Chap. 2

    Google Scholar 

  19. F.A. Grant: J. Appl. Phys.29, 76 (1958)

    Google Scholar 

  20. K.S. Cole, R.H. Cole: J. Chem. Phys.9, 341 (1941)

    Google Scholar 

  21. A. Goetzberger, E. Klausmann, M.J. Schultz: CRC Critical Review in Solid State Science, 1 (January 1976)

  22. J.R. Waldrop, S.P. Kowalczyk, R.W. Grant: Appl. Phys. Lett.42, 454 (1983)

    Google Scholar 

  23. R. Singh, J. Shewchun: J. Appl. Phys.49, 4588 (1978)

    Google Scholar 

  24. E. Harari, B.S.H. Royce: Appl. Phys. Lett.22, 106 (1973)

    Google Scholar 

  25. F.P. Heiman, G. Warfield: IEEE Trans.ED-12, 167 (1965)

    Google Scholar 

  26. H. Prier: Appl. Phys. Lett.10, 361 (1967)

    Google Scholar 

  27. J.C. Penley: Phys. Rev.128, 596 (1962)

    Google Scholar 

  28. Dov. Frohman-Bentchkowsky: Proc. IEEE28, 1207 (1970)

    Google Scholar 

  29. L.I. Chen, K.A. Pickard, S.M. Sze: Solid-State Electron.15, 979 (1972)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Engineering, Mutah University, P.O. Box 7, Karak, Jordan

    S. N. Al-Refaie

Authors
  1. S. N. Al-Refaie
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Formerly with the department of Engineering, Cambridge University, U.K.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Al-Refaie, S.N. Dielectric and interfacial properties of InP plasma-grown oxides. Appl. Phys. A 48, 575–582 (1989). https://doi.org/10.1007/BF00617860

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00617860

PACS

Search

Navigation