Applied Physics A

, Volume 48, Issue 6, pp 549–558 | Cite as

Amorphous hydrogenated carbon films on semiconductors

I. Electronic properties of the interface
  • D. Ugolini
  • J. Eitle
  • P. Oelhafen
  • M. Wittmer
Surfaces, Interfaces and Layar Structures


The interface properties of hydrogenated amorphous carbon films (a-C:H) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C:H films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate.


79.60 73.40 73.60 73.60H 71.25M 81.15 46.30P 


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Copyright information

© Springer-Verlag 1989

Authors and Affiliations

  • D. Ugolini
    • 1
  • J. Eitle
    • 1
  • P. Oelhafen
    • 1
  • M. Wittmer
    • 2
  1. 1.Institute of PhysicsUniversity of BaselBaselSwitzerland
  2. 2.IBM Thomas J. Watson Research CenterYorktown HeightsUSA

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